A NiSi salicide technology for advanced logic devices

Author

Morimoto, T. ; Momose, H.S. ; Iinuma, T. ; Kunishima, I. ; Suguro, K. ; Okana, H. ; Katakabe, I. ; Nakajima, H. ; Tsuchiaki, M. ; Ono, M. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

653

Lastpage

656

Abstract

A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.<>

Keywords

CMOS integrated circuits; VLSI; integrated circuit technology; metallisation; nickel compounds; 600 C; NiSi salicide; NiSi-Si; advanced logic devices; deep submicron devices; dual-gate CMOS structure; low contact resistance; n-MOSFETs; p-MOSFETs; pn junction characteristics; self-align silicide; silicides; Atomic layer deposition; Boron; CMOS technology; Contact resistance; Logic devices; MOSFET circuits; Silicidation; Silicides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235387

Filename

235387