Title :
A long-wavelength InGaAs/AlGaInAs MQW laser fabricated by Zn-diffusion induced disordering
Author :
Uesugi, F. ; Goto, K. ; Takahashi, S. ; Nishiguchi, H. ; Takiguchi, T. ; Mihashi, Y. ; Omura, E. ; Murotani, T. ; Ikeda, K.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Abstract :
The authors have fabricated a long-wavelength InGaAs/AlGaInAs MQW (multiple quantum well) laser in which optical confinement and carrier confinement are produced by disordering of the MQW. Pulsed oscillation at room temperature has been attained in this disordered system. It is believed that the lattice matched disordering of the InGaAs/AlGaInAs MQW structure is a promising technique for realizing a long-wavelength planar-type laser structure and other optoelectronic devices such as OEICs (optoelectronic integrated circuits).<>
Keywords :
III-V semiconductors; aluminium compounds; diffusion in solids; gallium arsenide; indium compounds; semiconductor lasers; zinc; InGaAs-AlGaInAs; InGaAs:Zn-AlGaInAs:Zn; MQW laser; Zn-diffusion induced disordering; carrier confinement; fabrication; lattice matched disordering; long wavelength lasers; multiple quantum well; optical confinement; planar-type laser structure; room temperature operation; semiconductors; Carrier confinement; Gas lasers; Indium gallium arsenide; Masers; Optical pulses; Optoelectronic devices; Quantum well devices; Temperature; Threshold current; Zinc;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235394
