Title :
High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers
Author :
Chen, Y.K. ; Wu, M.C. ; Kuo, J.M. ; Chin, M.A. ; Sergent, A.M.
Author_Institution :
AT&T Bell Lab. Murray Hill, NJ, USA
Abstract :
Aluminium-free InGaAs/GaAs/InGaP strained-layer quantum-well lasers have been grown on GaAs substrates by gas-source MBE (molecular beam epitaxy). High-temperature CW (continuous wave) operation of these (ridge waveguide lasers) has been demonstrated up to 185 degrees C, which is comparable to the best high-temperature laser performance in the strained-layer InGaAs/GaAs/AlGaAs quantum well lasers. Self-align index-guided lasers are also fabricated with gas-source MBE in two growth sequences. A threshold current of 12 mA is obtained from a 2.50- mu m-wide and 508- mu m-long self-aligned laser at room temperature under CW operation. This work demonstrates the regrowth capability of the gas source MBE technique to fabricate high-performance optoelectronic circuits and devices on the patterned aluminum-free InGaP layers.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; 12 mA; 185 C; 2.5 micron; 508 micron; CW operation; GSMBE; GaAs substrates; InGaAs-GaAs-InGaP; gas-source MBE; high-temperature laser; self-aligned laser; semiconductors; strained-layer quantum-well lasers; threshold current; Circuits; Gallium arsenide; Gas lasers; Indium gallium arsenide; Molecular beam epitaxial growth; Quantum well lasers; Substrates; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235395
