DocumentCode :
3304487
Title :
Charge carrier mobility in Bi2Te/sub 3-x/Sex(x<0.4) solid solution with excess of Te
Author :
Kutasov, V.A. ; Konstantinov, P.P.
Author_Institution :
A.F. Ioffe Phys.-Tech. Inst., Acad. of Sci., Moscow, Russia
fYear :
1996
fDate :
26-29 March 1996
Firstpage :
42
Lastpage :
45
Abstract :
Thermoelectric and galvanomagnetic properties of n-Bi/sub 2/Te/sub 3-x/Se/sub x/ (x<0.4) solid solutions with the carrier density /spl les/1.10/sup 18/ cm/sup -3/ are studied. Some peculiarities of the mobility temperature dependence with account of the effective scattering parameter r/sub ef/ are discussed.
Keywords :
bismuth compounds; carrier density; carrier mobility; galvanomagnetic effects; semiconductor materials; solid solutions; thermoelectricity; Bi/sub 2/Te/sub 3-x/Se/sub x/ solid solution; Bi/sub 2/Te/sub 3/Se; carrier density; carrier mobility; effective scattering parameter; galvanomagnetic properties; temperature dependence; thermoelectric properties; Acoustic scattering; Bismuth; Charge carrier density; Charge carrier mobility; Crystallization; Optical scattering; Solids; Tellurium; Temperature dependence; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
Type :
conf
DOI :
10.1109/ICT.1996.553253
Filename :
553253
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3304487
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