DocumentCode
3304643
Title
A low-temperature (
Author
King, T.-J. ; Saraswat, K.C.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., CA, USA
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
567
Lastpage
570
Abstract
N- and p-channel MOS thin-film transistors (TFTs) have been fabricated in LPCVD (low-pressure chemical vapor deposited) polycrystalline silicon-germanium (poly-SiGe) films using a low-temperature (maximum process temperature 550 degrees C) fabrication process. Since a poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times than a poly-Si TFT technology, it is attractive for large-area electronics applications.<>
Keywords
Ge-Si alloys; chemical vapour deposition; insulated gate field effect transistors; semiconductor growth; thin film transistors; 500 degC; LPCVD; MOS thin-film transistors; anneal temperatures; anneal times; large-area electronics; low temperature processing; nMOSFET; pMOSFET; polycrystalline SiGe alloy; thin-film transistor technology; Annealing; Chemical processes; Chemical technology; Fabrication; Germanium silicon alloys; Semiconductor films; Semiconductor thin films; Silicon germanium; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235406
Filename
235406
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