DocumentCode :
3304643
Title :
A low-temperature (
Author :
King, T.-J. ; Saraswat, K.C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
567
Lastpage :
570
Abstract :
N- and p-channel MOS thin-film transistors (TFTs) have been fabricated in LPCVD (low-pressure chemical vapor deposited) polycrystalline silicon-germanium (poly-SiGe) films using a low-temperature (maximum process temperature 550 degrees C) fabrication process. Since a poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times than a poly-Si TFT technology, it is attractive for large-area electronics applications.<>
Keywords :
Ge-Si alloys; chemical vapour deposition; insulated gate field effect transistors; semiconductor growth; thin film transistors; 500 degC; LPCVD; MOS thin-film transistors; anneal temperatures; anneal times; large-area electronics; low temperature processing; nMOSFET; pMOSFET; polycrystalline SiGe alloy; thin-film transistor technology; Annealing; Chemical processes; Chemical technology; Fabrication; Germanium silicon alloys; Semiconductor films; Semiconductor thin films; Silicon germanium; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235406
Filename :
235406
Link To Document :
