Title :
Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films
Author :
Miyasaka, M. ; Nakazawa, T. ; Ohshima, H.
Author_Institution :
Seiko Epson Corp., Nagano, Japan
Abstract :
As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<>
Keywords :
CVD coatings; elemental semiconductors; semiconductor growth; silicon; thin film transistors; 555 to 570 degC; ILPCVD; ON/OFF current ratios; SiH/sub 4/; infra-low pressure chemical vapor deposition; low temperature fabrication; polycrystalline Si; polysilicon TFTs; processing temperature; pumping speed; semiconductors high quality as deposited polysilicon; thin-film transistors; Chemicals; Crystallization; Fabrication; Laboratories; Open wireless architecture; Pressure measurement; Semiconductor films; Temperature; Thin film transistors; X-ray scattering;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235408
