Title :
A high speed 16 k gate CMOS gate array in thin SIMOX films
Author :
Nishimura, T. ; Yamaguchi, Y. ; Shimizu, M. ; Tsukamoto, Kazuya ; Akasaka, Y.
Author_Institution :
Mitsubishi Electric Corp., Itami, Japan
Abstract :
A 0.6 mu m CMOS technology on ultrathin SIMOX film was developed and applied to a 16 k CMOS gate array. By using NAND based ring oscillators, the contribution of the stray capacitance reduction to the speed performance was investigated, and the current drivability of MOSFETs on thin SIMOX under AC and DC operation was studied. The 16 bit*16 bit multiplier using 16 K CMOS gate array was successfully operated at a 1.5 times higher speed than the same circuit on bulk Si.<>
Keywords :
CMOS integrated circuits; SIMOX; logic arrays; 0.6 micron; 16 k gate configuration; AC operation; CMOS gate array; DC operation; MOSFETs; NAND based ring oscillators; Si; multiplier; thin SIMOX films; CMOS technology; Capacitance measurement; Circuits; Isolation technology; MOS devices; MOSFETs; Parasitic capacitance; Ring oscillators; Semiconductor films; Wiring;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235412
