A 0.35 mu m CMOS process for fast random logic

Author

Guegan, G. ; Lerme, M. ; Deleonibus, S. ; Martin, F. ; Heitzmann, M. ; Tedesco, S. ; Guerin, M. ; Reimbold, G. ; Leroux, C. ; Jaffard, C. ; Belleville, M.

Author_Institution

DTA-LETI, CENG, Grenoble, France

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

105

Lastpage

108

Abstract

Advanced high-performance CMOS circuits with 0.35 mu m gate length were developed using mixed e-beam/optical lithography. These circuits have been processed with the following features: field isolation with a SILO/RTN (sealed interface local oxidation by rapid thermal nitridation) process, n+ polysilicon gate, TaSi/sub 2/ gate material, contact with W plug and RTA for both BPSG reflow and junction activation. These modules have been applied to point out speed performances of 0.35 mu m CMOS demonstrator circuits. A 2.8 V power supply voltage was adopted to satisfy the trade-off between circuit performance and reliability. A gate delay of 52 ps/stage and a 16*16 bit multiplication time of 5.2 ns were measured. Due to careful device optimization, good device behavior with high drivability, no leakage current in weak inversion characteristics, and negligible short channel effects were observed.<>

Keywords

CMOS integrated circuits; integrated circuit technology; integrated logic circuits; rapid thermal processing; 0.35 micron; 2.8 V; 5.2 ns; 52 ps; B2O3-P2O5-SiO2; BPSG reflow; CMOS process; RTA; SILO/RTN process; TaSi/sub 2/ gate material; W plug contact; fast random logic; field isolation; gate delay; junction activation; mixed e-beam/optical lithography; multiplication time; n+ polysilicon gate; rapid thermal nitridation; sealed interface local oxidation; sub-half micron process; submicron technology; CMOS logic circuits; CMOS process; Lithography; Optical materials; Oxidation; Plugs; Power supplies; Rapid thermal processing; Sealing materials; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235413

Filename

235413