A 5.2 GHz, 1.7 dB NF low noise amplifier for wireless LAN based on 0.18 um CMOS technology

Author

Nguyen, Trung-Kien ; Lee, Sang-Gug

Author_Institution

Inf. & Commun. Univ., Daejon, South Korea

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

251

Lastpage

254

Abstract

A high gain, low noise LNA is implemented using inter-stage series resonance technique. This paper reports the implication of the quality factor of the resonating inductor on the LNA performances such as voltage and current gain, noise figure, and power gain. Two versions LNAs with low and high resonating inductors are designed for 5.2 GHz applications based on 0.18 μm CMOS technology. Simulation results show power gain of 18.9 dB, NF of 1.7 dB, and OIP3 of 12.9 dBm from the high Q inductor version.

Keywords

CMOS analogue integrated circuits; Q-factor; inductors; integrated circuit noise; radiofrequency amplifiers; radiofrequency integrated circuits; wireless LAN; 0.18 micron; 1.7 dB; 18.9 dB; 5.2 GHz; CMOS technology; OIP3; current gain; low noise amplifier; noise figure; power gain; quality factor; resonating inductor; series resonance; voltage gain; wireless LAN; CMOS technology; Inductors; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain; Q factor; Resonance; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187683

Filename

1187683