Title :
A 5.2 GHz, 1.7 dB NF low noise amplifier for wireless LAN based on 0.18 um CMOS technology
Author :
Nguyen, Trung-Kien ; Lee, Sang-Gug
Author_Institution :
Inf. & Commun. Univ., Daejon, South Korea
Abstract :
A high gain, low noise LNA is implemented using inter-stage series resonance technique. This paper reports the implication of the quality factor of the resonating inductor on the LNA performances such as voltage and current gain, noise figure, and power gain. Two versions LNAs with low and high resonating inductors are designed for 5.2 GHz applications based on 0.18 μm CMOS technology. Simulation results show power gain of 18.9 dB, NF of 1.7 dB, and OIP3 of 12.9 dBm from the high Q inductor version.
Keywords :
CMOS analogue integrated circuits; Q-factor; inductors; integrated circuit noise; radiofrequency amplifiers; radiofrequency integrated circuits; wireless LAN; 0.18 micron; 1.7 dB; 18.9 dB; 5.2 GHz; CMOS technology; OIP3; current gain; low noise amplifier; noise figure; power gain; quality factor; resonating inductor; series resonance; voltage gain; wireless LAN; CMOS technology; Inductors; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain; Q factor; Resonance; Voltage; Wireless LAN;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187683
