DocumentCode :
3304767
Title :
A new n-type and improved p-type pseudo-ternary (Bi2Te3)(Sb2Te3)(Sb2Se3) alloy for Peltier cooling
Author :
Ettenberg, M.H. ; Jesser, W.A. ; Rosi, F.D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Virginia Univ., Charlottesville, VA, USA
fYear :
1996
fDate :
26-29 March 1996
Firstpage :
52
Lastpage :
56
Abstract :
The pseudo-ternary alloy of (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) has been explored for over twenty-five years with little progress in the figure of merit, p-type 3.4/spl times/10/sup -3//K and n-type 3.2/spl times/10/sup -3//K. Using multiple dopants, Te and SbI/sub 3/, higher figure of merit material can be achieved without creating more of the deleterious pure Te commonly found as a second phase in the p-type alloy, (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/. Using a combination of the two dopants figures of merit as high as 3.7/spl times/10/sup -3//K have been achieved. Using two dopants has also permitted the creation of an n-type alloy with a composition of (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/. Previously n-type doping could not be achieved with a single dopant because the alloy as grown always exhibits p-type conductivity. Using Te and SbI/sub 3/ together as dopants, or SbI/sub 3/ by itself in this alloy produces n-type material with a figure of merit of 3.4/spl times/10/sup -3//K.
Keywords :
Peltier effect; bismuth compounds; semiconductor materials; thermoelectricity; (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/); (Bi/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Te/sub 3/)/sub 72/(Sb/sub 2/Se/sub 3/)/sub 3/; (Bi/sub 2/Te/sub 3/)/sub 70/(Sb/sub 2/Te/sub 3/)/sub 25/(Sb/sub 2/Se/sub 3/)/sub 5/; Peltier cooling; figure of merit; p-type conductivity; pseudo-ternary (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) alloy; Bismuth; Composite materials; Conducting materials; Doping; Equations; Phonons; Tellurium; Thermal conductivity; Thermal resistance; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
Type :
conf
DOI :
10.1109/ICT.1996.553255
Filename :
553255
Link To Document :
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