DocumentCode :
3304800
Title :
Semiconductor quantum-dot based wideband emitter for optical sensors
Author :
Djie, Hery S. ; Dimas, Clara E. ; Ooi, Boon S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear :
2005
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 mum wide) butt-connected to a broad-area photon absorber (50 mum wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20 degC) with wavelength peak at ~1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device
Keywords :
optical feedback; optical sensors; ridge waveguides; semiconductor quantum dots; superluminescent diodes; 20 C; 4 micron; 50 micron; InGaAs-GaAs; broadband superluminescent diode; index-guided ridge-waveguide; lasing action suppression; optical feedback; optical sensors; photon absorber; semiconductor quantum-dot heterostructure; wideband emitter; Bandwidth; Biomedical optical imaging; Light sources; Optical feedback; Optical pumping; Optical sensors; Quantum dots; Stimulated emission; Superluminescent diodes; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
Type :
conf
DOI :
10.1109/ICSENS.2005.1597853
Filename :
1597853
Link To Document :
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