Paradoxical boron profile broadening caused by implantation through a screen oxide layer

Author

Park, C. ; Klein, K.M. ; Tasch, A.F. ; Simonton, R.B. ; Lux, G.E.

Author_Institution

Microelectron Res. Center, Texas Univ., Austin, TX, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

67

Lastpage

70

Abstract

The effects of an overlaying silicon dioxide layer on boron ion channeling and implant profile depths have been examined through analysis of experimentally measured profiles and the results of Monte Carlo simulations using the UT-MARLOWE code. Details of the randomizing effects of the oxide layer are presented, and a surprising anomaly is revealed: implantations through screen oxide layers can actually result in broader (deeper) profiles than similar implantations into bare silicon. The effectiveness of the screen oxide in randomizing the directions of implanted ions was found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It has also been shown that even the total randomization of the directions of the ions does not completely eliminate ion channeling.<>

Keywords

Monte Carlo methods; boron; digital simulation; doping profiles; elemental semiconductors; ion implantation; semiconductor doping; silicon; B profile broadening; Monte Carlo simulations; Si wafers; SiO/sub 2/-Si:B; UT-MARLOWE code; implant profile depths; implantation; ion channeling; ion energy; oxide thickness; randomizing effects; screen oxide layer; Boron; Cities and towns; Electrostatics; Ion beams; Ion implantation; Microelectronic implants; Scattering; Semiconductor devices; Silicon compounds; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235422

Filename

235422