DocumentCode
3304941
Title
Phase shift reticles
Author
Okazaki, S. ; Hasegawa, N. ; Imai, A.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
55
Lastpage
58
Abstract
The authors propose a novel phase-shifting reticle structure with two shifter layers. Experimental results show the effectiveness of the two shifter layers for repairing defects. A novel phase-shifter fabrication technique for the proposed structure is also demonstrated. The proposed fabrication process utilizes electron-beam-sensitive SOG (spin-on-glass) materials. The use of this material reduces the number of process steps for forming the phase shift reticle.<>
Keywords
masks; photolithography; semiconductor technology; defect repair; electron-beam-sensitive SOG; optical lithography; phase-shifter fabrication technique; phase-shifting reticle; spin-on-glass; Conducting materials; Electron beams; Electron optics; Electronics industry; Inspection; Laboratories; Optical device fabrication; Optical materials; Refractive index; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235425
Filename
235425
Link To Document