DocumentCode :
3304941
Title :
Phase shift reticles
Author :
Okazaki, S. ; Hasegawa, N. ; Imai, A.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
55
Lastpage :
58
Abstract :
The authors propose a novel phase-shifting reticle structure with two shifter layers. Experimental results show the effectiveness of the two shifter layers for repairing defects. A novel phase-shifter fabrication technique for the proposed structure is also demonstrated. The proposed fabrication process utilizes electron-beam-sensitive SOG (spin-on-glass) materials. The use of this material reduces the number of process steps for forming the phase shift reticle.<>
Keywords :
masks; photolithography; semiconductor technology; defect repair; electron-beam-sensitive SOG; optical lithography; phase-shifter fabrication technique; phase-shifting reticle; spin-on-glass; Conducting materials; Electron beams; Electron optics; Electronics industry; Inspection; Laboratories; Optical device fabrication; Optical materials; Refractive index; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235425
Filename :
235425
Link To Document :
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