DocumentCode
3304987
Title
An accurate and compact large-signal model for MESFETs, HFETs and PHEMTs
Author
Xuebang, Gao ; Lidong, Mo
Author_Institution
Nat. Key GaAs IC Lab., Hebei Semicond. Res. Inst., Shijiazhuang, China
fYear
2002
fDate
17-19 Aug. 2002
Firstpage
308
Lastpage
311
Abstract
A new large-signal model and modeling method are presented. The pulsed I-V testing data is adopted to suppress the effects of traps and self-heating. The model has the enhanced simulation accuracy and convergence property. The improved parameter extraction technique has the features of efficiency and accuracy. The novel model has been verified in terms of I-V, C-V and power performance for different PHEMTs, HFETs and MESFETs as well as circuits.
Keywords
Schottky gate field effect transistors; high electron mobility transistors; junction gate field effect transistors; semiconductor device models; C-V characteristics; HFET; I-V characteristics; MESFET; PHEMT; large-signal model; parameter extraction; power characteristics; pulsed I-V testing; self-heating; traps; Capacitance-voltage characteristics; Circuit simulation; Data mining; HEMTs; Integrated circuit modeling; MESFETs; MODFETs; PHEMTs; Parameter extraction; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN
0-7803-7486-X
Type
conf
DOI
10.1109/ICMMT.2002.1187698
Filename
1187698
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