Title :
A simplified noise modeling of mm-wave FETs
Author :
Moradi, Gholamreza ; Abdipour, Abdoluli
Author_Institution :
Electron. Engineeing Dept., Civil Aviation Technol. Coll., Tehran, Iran
Abstract :
A simple procedure for finding the noise parameters of MESFETs and HEMTs is discussed. The influence of gate width on the equivalent noise temperature of HEMTs is studied. This is the basis of width scaling and is applicable in high power FETs. Also the influence of drain current on the noise performance of FETs is discussed. This matter is useful in accurate noise modeling of mm-wave ICs.
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; millimetre wave field effect transistors; power field effect transistors; semiconductor device models; semiconductor device noise; HEMT; MESFET; MM-wave FET; bias dependence; drain current; equivalent noise temperature; gate width scaling; noise model; power FET; Airports; Circuit noise; Educational institutions; HEMTs; MODFETs; Microwave FETs; Microwave technology; Noise figure; Temperature; Wireless communication;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187699
