A distributed small-signal HBT model for millimeter-wave applications

Author

Ooi, Ban-Leong ; Zhou, Tianshu ; Kooi, Pang-Shyan ; Lin, Fu-Jiang ; Hui, So-Chi

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

318

Lastpage

321

Abstract

A novel distributed small-signal HBT model at millimeter-wave frequencies is proposed. This new approach is based on an electromagnetic simulation on the extrinsic passive part of an HBT. The S-parameters of the HBT intrinsic active part are computed by using the "multi-port connection method" (K.C. Gupta et al, Computer-aided design of microwave circuits, Artech House Inc., 1981). Then, values of all the HBT intrinsic model elements can be obtained by using explicit analytical expressions. Good agreement between the measured and the simulated results has been demonstrated.

Keywords

S-parameters; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device models; HBT extrinsic passive section; HBT intrinsic active section; HBT intrinsic model elements; S-parameters; distributed small-signal HBT model; electromagnetic simulation; millimeter-wave applications; multi-port connection method; Application software; Circuit simulation; Computational modeling; Design automation; Frequency; Heterojunction bipolar transistors; Microwave circuits; Millimeter wave circuits; Millimeter wave technology; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187701

Filename

1187701