Title :
DC-50 GHz switch MESFET modeling technique for GaAs control MMICs and its application
Author :
Yongsheng Dai ; Lin Liu ; Xiaojian Chen
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
Based on Agilent IC-CAP and Eesof Software, a DC-50 GHz switch MESFET modeling technique for GaAs control MMICs at Nanjing Electronic Devices Institute (NEDI) is presented. Layout design of modeling FET, microwave probing calibration, model extraction and statistics/verification are introduced and discussed. By using the established models, GaAs control MMICs series such as (1) DC-20 GHz reflective-type SPST and SPDT switch series; (2) DC-35 GHz reflective-type SPDT switch; (3) DC-50 GHz low phase shift voltage control attenuator; and (4) different frequency range and different types of phase shifter series, were successfully developed to cover the frequency range from DC to 50 GHz.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; Schottky gate field effect transistors; circuit CAD; field effect MMIC; field effect transistor switches; gallium arsenide; integrated circuit design; microwave field effect transistors; microwave switches; semiconductor device measurement; semiconductor device models; 0 Hz to 50 GHz; 20 GHz; 35 GHz; Agilent IC-CAP; Eesof Software; GaAs; GaAs control MMIC; frequency range; layout design; low phase shift voltage control attenuator; microwave probing calibration; model extraction; model statistics; model verification; phase shifter; reflective-type SPDT switch; reflective-type SPST switch; switch MESFET modeling; Application software; Calibration; Frequency; Gallium arsenide; MESFETs; MMICs; Microwave FETs; Microwave devices; Switches; Voltage control;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187702
