Title :
Bulk Acoustic Wave Resonators 3D Simulation
Author :
Giraud, Sylvain ; Bila, Stephane ; Aubourg, Michel ; Cros, Dominique
Author_Institution :
Xlim, Limoges
fDate :
July 30 2007-Aug. 2 2007
Abstract :
This article discusses numerical simulations of thin film bulk acoustic wave resonators. FBAR simulation with 1D analytical model permits to quickly determine resonator layers thicknesses that correspond to the objective resonant frequency. 3D finite elements method permits to investigate the effect of the electrode shape on the spurious modes that are present in the electrical impedance. In order to reduce or to suppress those modes, solutions have to be investigated.
Keywords :
acoustic resonators; bulk acoustic wave devices; finite element analysis; 1D analytical model; 3D finite elements method; 3D simulation; FBAR simulation; electrical impedance; electrode shape; numerical simulations; resonant frequency; spurious modes; thin film bulk acoustic wave resonators; Acoustic waves; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Impedance; Numerical simulation; Resonant frequency; Shape; Transistors; Acoustic resonator; Bulk Acoustic Wave devices; Modeling; Simulation;
Conference_Titel :
Signals, Systems and Electronics, 2007. ISSSE '07. International Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
1-4244-1448-2
Electronic_ISBN :
1-4244-1449-0
DOI :
10.1109/ISSSE.2007.4294479
