Extraction of MESFET equivalent-circuit elements by sub-bands optimization

Author

Bejaoui, Wahid ; Choubani, Fethi ; Bouallegue, Ammar

Author_Institution

Nat. Sch. of Eng. of Tunis, Tunisia

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

326

Lastpage

329

Abstract

A simple method for MESFET parameters extraction is presented, where the wideband behavior of intrinsic and extrinsic elements is taken into account. The method is based on splitting the whole operating frequency into several sub-bands where extraction of selected set parameters is performed. This modeling process overcomes drawbacks of global optimization technique and gives more insight into device´s physical behavior. This new approach shows good agreement between measurements and simulations.

Keywords

Schottky gate field effect transistors; equivalent circuits; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; MESFET equivalent-circuit elements extraction; MESFET parameters extraction; device physical behavior; extrinsic elements; intrinsic elements; measurements; microwave applications; millimetre wave applications; modeling process; operating frequency sub-band splitting; set parameter extraction; simulations; sub-bands optimization; wideband behavior; Circuit simulation; Data mining; Frequency measurement; MESFETs; Microwave devices; Modems; Optimization methods; Parameter extraction; Scattering parameters; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187703

Filename

1187703