Title :
A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application
Author :
Yamauchi, Y. ; Tanaka, K. ; Shibayama, H. ; Miyake, R.
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain voltage of 5 V. It also provides a read-out current higher than 100 mu A and a soft-write lifetime greater than 10 years in read operation. The cell is suitable for high-density flash memories beyond 16 M bits.<>
Keywords :
CMOS integrated circuits; EPROM; VLSI; integrated memory circuits; 0.5 micron; 1 mus; 10 y; 100 muA; 16 Mbit; 5 V; CMOS; ULSI; auxiliary gate; cell area; drain voltage; fast programming; flash EEPROM; high density; high speed application; read-out current; single voltage supply; soft-write lifetime; virtual ground flash cell; EPROM; Electronic equipment; Electrons; Etching; Implants; Laboratories; Nonvolatile memory; Power supplies; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235439
