DocumentCode
3305233
Title
Evaluation of 3C-SiC nanomechanical resonators using room temperature magnetomotive transduction
Author
Jun, Seong Chan ; Huang, X. M Henry ; Hone, J. ; Zorman, C.A. ; Mehregany, M.
Author_Institution
Mech. Eng., Columbia Univ., New York, NY
fYear
2005
fDate
Oct. 30 2005-Nov. 3 2005
Abstract
We report our efforts toward using room temperature magnetomotive transduction technique for SiC nanomechanical resonators. The resonators were nanomachined from 30 nm-thick 3C-SiC thin films epitaxially grown on (100) silicon. The structures show mechanical resonance at 10.41 MHz with a quality factor of about 2800. Magnetomotive transduction was used to read out the resonance at room temperature and moderate pressure. This technique has the potential to become an important tool for studying the properties of ultrathin films, as well as developing deployable SiC-based NEMS prototype devices and systems for applications that would benefit from SiC as the structural material
Keywords
magnetostrictive devices; micromachining; micromechanical resonators; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 10.41 MHz; 30 nm; C-SiC; NEMS prototype devices; magnetomotive transduction; mechanical resonance; nanomachining; nanomechanical resonators; thin film epitaxial growth; Aluminum; Etching; Magnetic field measurement; Magnetic resonance; Nanoelectromechanical systems; Optical resonators; Prototypes; Silicon carbide; Superconducting magnets; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2005 IEEE
Conference_Location
Irvine, CA
Print_ISBN
0-7803-9056-3
Type
conf
DOI
10.1109/ICSENS.2005.1597881
Filename
1597881
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