DocumentCode
3305245
Title
A new body-effect elimination technique for ISFET measurement
Author
Chung, Wen-Yaw ; Pijanowska, Dorota G. ; Torbicz, Wladyslaw ; Yang, Chung-Huang ; Grabiec, Piotr B.
Author_Institution
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-Li
fYear
2005
fDate
Oct. 30 2005-Nov. 3 2005
Abstract
This paper presents a new circuit technique to reduce the body-effect for more accurate ISFET measurement. In a floating source readout configuration, the most popular n-channel ISFET in a p-type silicon substrate is easily influenced by back gate bias. Based on a proposed bridge-type floating source circuitry, a current mirror and a MOS drawing the same drain current as the ISFET, the scheme allows reduction of influence of body effect. The proposed technique is simple and has a universal use for different kind of ISFETs
Keywords
MIS structures; current mirrors; elemental semiconductors; ion sensitive field effect transistors; semiconductor device measurement; silicon; ISFET measurement; MOS; back gate bias; body-effect elimination; bridge-type floating source circuitry; current mirrors; n-channel ISFET; p-type silicon substrate; Biomedical engineering; Biomedical measurements; Biomembranes; Circuits; Cities and towns; FETs; Mirrors; Paper technology; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2005 IEEE
Conference_Location
Irvine, CA
Print_ISBN
0-7803-9056-3
Type
conf
DOI
10.1109/ICSENS.2005.1597882
Filename
1597882
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