• DocumentCode
    33053
  • Title

    Broadband Saturated Power Amplifier With Harmonic Control Circuits

  • Author

    Junghwan Son ; Yunsik Park ; Ildu Kim ; Junghwan Moon ; Bumman Kim

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • Volume
    24
  • Issue
    3
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    185
  • Lastpage
    187
  • Abstract
    This letter presents a broadband saturated power amplifier (PA) using the harmonic control circuits for base station application. The saturated PA has advantages for broadband operation with high efficiency due to the large tolerance of the second harmonic tuning. However, it is difficult to simultaneously achieve the fundamental and second harmonic impedance matching across a wide bandwidth. To solve the problem, the harmonic control circuits are placed at the input and output of the device´s die. These harmonic control circuits play a role of leading the second harmonic impedances to the optimum regions but are specially designed to be insensitive to the following fundamental matching circuit. The saturated PA with the harmonic control circuit is designed using a 120 W GaN device, achieving a high efficiency and wide bandwidth characteristics simultaneously. The measured output power, drain efficiency, and gain are at least 51.0 dBm, 71.0%, and 8.22 dB at the saturation across the 1.75 to 2.17 GHz (21% relative bandwidth) under pulse test (10% duty). This saturated PA also delivers good performances for long term evolution (LTE) and wideband code division multiple access (WCDMA) modulated signals at 1.85 and 2.14 GHz, respectively. These results show that the broadband saturated PA with the harmonic control circuit is suitable to wide bandwidth multimode/multiband applications.
  • Keywords
    III-V semiconductors; Long Term Evolution; UHF power amplifiers; circuit tuning; code division multiple access; gallium compounds; impedance matching; network synthesis; wide band gap semiconductors; wideband amplifiers; GaN; LTE; Long Term Evolution; PA; WCDMA; base station application; broadband saturated power amplifier; efficiency 71.0 percent; frequency 1.75 GHz to 2.17 GHz; gain 8.22 dB; harmonic control circuit; power 120 W; second harmonic impedance matching circuit; second harmonic tuning; signal modulation; wide bandwidth multimode-multiband application; wideband code division multiple access; Bandwidth; Broadband amplifiers; Gallium nitride; Harmonic analysis; Impedance; Impedance matching; Base station; broadband; harmonic control; long term evolution (LTE); power amplifier (PA); saturated PA;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2013.2292925
  • Filename
    6689349