A quarter-micron interconnection technology using Al-Si-Cu/TiN alternated layers

Author

Kikkawa, T. ; Aoki, H. ; Ikawa, E. ; Drynan, J.

Author_Institution

NEC Corp., Sagamihara City, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

281

Lastpage

284

Abstract

A novel interconnection structure using Al-Si-Cu/TiN alternated layers has been investigated as a quarter-micron interconnection candidate for 256 MDRAM. A TiN/Al-1%Si-0.5%Cu/TiN/Al-1%Si-0.5%Cu/TiN/Ti layered film structure was designed for both electro- and stress-migration-resistant interconnections. This alternated layer structure has extremely high endurances in terms of mechanical hardness, tensile strength, and electromigration lifetime.<>

Keywords

DRAM chips; VLSI; aluminium alloys; copper alloys; metallisation; silicon alloys; 0.25 micron; 256 Mbit; Al-Si-Cu alloys; AlSiCu-TiN; DRAM; ULSI; alternated layer structure; electromigration lifetime; electromigration resistance; electromigration resistant interconnections; high endurances; interconnection structure; layered film structure; mechanical hardness; quarter-micron interconnection technology; stress migration resistance; stress-migration-resistant interconnections; tensile strength; Annealing; Argon; Conductors; Plasma measurements; Plasma temperature; Scanning electron microscopy; Sputtering; Substrates; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235448

Filename

235448