DocumentCode :
3305392
Title :
Properties of iron disilicide doped with Ru, Rh and Pd
Author :
Fedorov, M.I. ; Khazan, M.A. ; Kaliazin, A.E. ; Zaitsev, V.K. ; Kartenko, N.F. ; Engelychev, A.E.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear :
1996
fDate :
26-29 March 1996
Firstpage :
75
Lastpage :
78
Abstract :
This paper shows the results of a study of electrical resistivity and thermopower of semiconductor iron disilicide /spl beta/-FeSi/sub 2/ doped with Ru, Rh and Pd in the temperature range 300-1000 K. Polycrystalline samples for measurement were prepared by the vacuum-casting method. The limits of each dopant solubility in iron disilicide were estimated by X-ray diffraction measurements. It is shown that if non-band conductivity mechanism takes place in pure iron disilicide, the addition of the heavy metals results in change of conductivity mechanism. The results obtained are discussed from the point of optical phonon drag effect.
Keywords :
X-ray diffraction; electrical conductivity; electrical resistivity; iron compounds; palladium; phonon drag; rhodium; ruthenium; semiconductor doping; semiconductor growth; semiconductor materials; thermoelectric power; /spl beta/-FeSi/sub 2/; 300 to 1000 K; FeSi/sub 2/:Pd; FeSi/sub 2/:Rh; FeSi/sub 2/:Ru; X-ray diffraction; dopant solubility; optical phonon drag effect; vacuum-casting method; Aluminum; Atom optics; Atomic measurements; Cobalt; Iron; Manganese; Optical scattering; Phonons; Temperature dependence; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
Type :
conf
DOI :
10.1109/ICT.1996.553260
Filename :
553260
Link To Document :
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