A 0.25 mu m via plug process using selective CVD aluminium for multilevel interconnection

Author

Amazawa, T. ; Arita, Y.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

265

Lastpage

268

Abstract

A multilevel interconnection with 0.25- mu m via holes has been successfully fabricated using a selective CVD (chemical vapor deposition) aluminum via plug process. Via holes on first-level aluminum interconnections have been fully plugged for the first time by selective CVD aluminum in combination with in situ RF cleaning. Specific contact resistivities of CVD aluminum via plugs are estimated to be as low as 5*10/sup -10/ Omega cm/sup 2/, and the yield for 10/sup 4/ via chains is 100% for test patterns with various via diameters of 0.25-2 mu m. Electromigration tests for the CVD aluminum plugs demonstrate extremely high reliability compared to conventional sputtering samples. The results presented demonstrate that the selective aluminum CVD process is a promising technique for future quarter-micron LSIs.<>

Keywords

CVD coatings; VLSI; aluminium; electromigration; metallisation; reliability; 0.25 to 2.0 micron; Al via plugs; ULSI; contact resistivities; in situ RF cleaning; multilevel interconnection; reliability; selective CVD; via chains; via diameters; via holes; via plug process; yield; Aluminum; Chemical vapor deposition; Cleaning; Conductivity; Electromigration; Plugs; Radio frequency; Sputtering; Testing; Yield estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235452

Filename

235452