Step-recessed gate GaAs FETs with an undoped surface layer

Author

Takahashi, H. ; Asano, K. ; Matsunaga, K. ; Iwata, Naoki ; Mochizuki, A. ; Hirayama, H.

Author_Institution

NEC Corp., Shiga, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

259

Lastpage

262

Abstract

A step-recessed gate GaAs power FET with an undoped surface layer, which clads the n-GaAs channel, has been developed to simultaneously obtain a power-added efficiency (PAE) of more than 40% and a single-chip output power of more than 4 W in the class-A operation at the Ku-band. The undoped surface layer has been found to be effective for suppressing the frequency dispersion phenomena caused by a surface trapping effect and for raising the power level. The gate structure, with an undoped layer underneath the gate metal, has been found to be effective for improving the breakdown voltage, reducing the gate capacitance, and achieving high PAE. To the authors´ knowledge, these RF power performances with high linear gain represent the best data at 12 GHz.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 12 GHz; 4 W; 40 percent; GaAs; GaAs power FET; Ku-band; RF power performances; breakdown voltage; class-A operation; frequency dispersion phenomena suppression; gate capacitance; gate structure; high linear gain; n-GaAs channel; power-added efficiency; semiconductors; single-chip output power; step-recessed gate; undoped surface layer; Capacitance; Dispersion; FETs; Frequency; Gain; Gallium arsenide; MESFETs; National electric code; Power generation; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235453

Filename

235453