DocumentCode
3305492
Title
Thermal characterization of GaAs MESFETs by means of pulsed measurements
Author
Selmi, L. ; Ricco, B.
Author_Institution
Dept. of Electron., Bologna Univ., Italy
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
255
Lastpage
258
Abstract
Thermal effects in GaAs MESFETs have been characterized by means of pulsed I-V measurements performed at several controlled temperatures. The temperature dependence of the main device parameters, extracted from the measured data, was implemented in a simplified, SPICE-like model of the device, coupling electrical and thermal effects. The model provides good agreement with the measured data over wide bias and temperature ranges.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; semiconductor device testing; GaAs; SPICE-like model; bias range; device parameters; electrical effects; modelling; pulsed I-V measurements; pulsed measurements; semiconductors; temperature dependence; temperature range; thermal effects; Couplings; Data mining; Electric variables measurement; Gallium arsenide; MESFETs; Performance evaluation; Pulse measurements; Temperature control; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235454
Filename
235454
Link To Document