Novel pseudomorphic InP/InAs/sub 0.6/P/sub 0.4/ quantum-well HEMT´s

Author

Hong, W.-P. ; Hayes, J.R. ; Bhat, R. ; Lin, P.S.D. ; Nguyen, C. ; Lee, H.P. ; Yang, D. ; Bhattacharya, P.K.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

243

Lastpage

246

Abstract

The authors report the first investigation of the transport properties of a 2DEG in pseudomorphic InP/InAs/sub x/P/sub 1-x/ modulation-doped heterostructures and the device characteristics of HEMTs (high electron mobility transistors) with an InP/InAs/sub 0.6/P/sub 0.4/ quantum-well channel. The dependence of the low- and high-field transport properties on the arsenic composition (x) has been studied. The Hall mobility for x=0.6 was measured to be 6100 and 52700 cm/sup 2//V-s at 300 and 77 K, respectively. The FETs having a gate length of 0.5 mu m exhibited a maximum external transconductance of 320 mS/mm and a drain saturation current density of 705 mA/mm. The f/sub T/ and f/sub max/ were measured to be 55 and 60 GHz, respectively. The saturation electron velocity was estimated to be 2.1*10/sup 7/ cm/s. The results clearly demonstrate the great potential of these material systems for high-speed applications.<>

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor quantum wells; solid-state microwave devices; vapour phase epitaxial growth; 0.5 micron; 2.1E5 m/s; 2DEG; 300 K; 55 to 60 GHz; 77 K; HEMTs; Hall mobility; InP-InAsP; device characteristics; drain saturation current density; gate length; high electron mobility transistors; high-field transport properties; low field transport properties; maximum frequency; modulation-doped heterostructures; pseudomorphic HEMTs; quantum well HEMTs; quantum-well channel; saturation electron velocity; semiconductors; transconductance; Current density; Electrons; Epitaxial layers; FETs; HEMTs; Hall effect; Indium phosphide; MODFETs; Quantum well devices; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235457

Filename

235457