140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT

Author

Tan, K.L. ; Streit, D.C. ; Chow, P.D. ; Dia, R.M. ; Han, A.C. ; Liu, P.H. ; Garske, D. ; Lai, R.

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

239

Lastpage

242

Abstract

The authors report the design, fabrication, and millimeter-wave performance of 0.1- mu m T-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP high electron mobility transistors (HEMTs). When tuned and biased for minimum noise, the device achieved a noise figure of 1.3 dB with 8.2-dB associated gain at 95 GHz. When tested at D-band, the device achieved a gain of 7.3 dB at 141.5 GHz. The gain at both these frequencies is the highest ever reported for InP HEMTs, and demonstrates the feasibility of this device technology for operating at frequencies beyond 100 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; solid-state microwave devices; 0.1 micron; 1.3 dB; 7.3 dB; 8.2 dB; 95 to 141.5 GHz; D-band; EHF; HEMTs; InAlAs-InGaAs-InP; InP substrate; T-gate; design; device technology; fabrication; gain; gate-length; high electron mobility transistors; millimeter-wave performance; noise figure; pseudomorphic HEMT; semiconductors; Fabrication; Frequency; Gain; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; Millimeter wave transistors; Noise figure; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235458

Filename

235458