Title :
Field emission diodes with tungsten wedge cathode
Author :
Carr, W.N. ; Kim, J.M. ; Zeto, R.J. ; Zakar, E.S. ; Mulford, C.D.
Author_Institution :
Microelectron Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
A process technology and device characterization for vacuum microelectronic diodes with a lateral electron trajectory are described. The cathode for the diode devices is fabricated with successive deposition of Al-W-Ti:W utilizing DC magnetron sputtering. The aluminum film is partially sacrificed to achieve the necessary sharp tip of tungsten for field emission. The metals are deposited by DC magnetron sputtering followed by liftoff lithography and thermal annealing. Selected devices which are electrically characterized in 2 to 5*10/sup -9/ torr vacuum are compared with the Fowler-Nordheim-based model. The cathode-to-anode lateral spacing in these devices is 0.8 mu m. A maximum of 23- mu A current is obtained from the cathode of one of the devices investigated. Static electrical characteristics predicted by the Fowler-Nordheim relationship are compared with experimental data.<>
Keywords :
diodes; electron field emission; sputtered coatings; tungsten; vacuum microelectronics; 0.8 micron; 23 muA; 2E-9 to 5E-9 torr; Al-W-Ti:W; DC magnetron sputtering; Fowler-Nordheim-based model; W wedge cathode; cathode-to-anode lateral spacing; current; device characterization; electrical characteristics; experimental data; field emission cathodes; field emission diodes; lateral electron trajectory; liftoff lithography; process technology; sharp tip; successive deposition; thermal annealing; vacuum microelectronic diodes; Aluminum; Cathodes; Diodes; Electrons; Lithography; Magnetic devices; Microelectronics; Sputtering; Tungsten; Vacuum technology;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235461
