Point and wedge tungsten-on-silicon field emitter arrays

The authors have measured 20 mu A/tip from single-tip silicon field emitter array (FEA) cells made from 10/sup 15//cm/sup 3/ n-type silicon. The current-voltage characteristics show a linear Fowler-Nordheim relationship and do not show current saturation. These results indicate that silicon-based FEAs might be able to compete with metal-based FEAs for RF power applications. In addition, the authors report the fabrication of silicon-based wedge, trench, and tungsten-on-silicon FEA structures. These new structures might have advantages and disadvantages compared with the classical point-like structures in some applications such as linear beam tubes.<>