• DocumentCode
    3305614
  • Title

    Quantum transport simulations of electron field emission

  • Author

    Jensen, K.L. ; Ganguly, A.K.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • fYear
    1991
  • fDate
    8-11 Dec. 1991
  • Firstpage
    217
  • Lastpage
    220
  • Abstract
    The authors report on the comparison of various quantum transport calculations for metal-vacuum tunneling structures under high electric fields. Specifically, they compared the WKB approximation to the transmission coefficient (TC) for evaluating current-voltage relationships to the more accurate Airy function approach, and both of these approaches to the Wigner distribution function (WDF) approach to quantum transport. The purpose of this study is to examine electron transport through metal (or semiconductor)-vacuum interfaces and to assess the utility of various techniques for their incorporation into larger simulation packages, such as ensemble particle Monte Carlo. As the WDF has been used for the first time to study issues of interest to vacuum microelectronics, the authors assess its advantages and shortcomings.<>
  • Keywords
    Monte Carlo methods; WKB calculations; electron field emission; tunnelling; vacuum microelectronics; Airy function approach; WDF; WKB approximation; Wigner distribution function; current voltage characteristics; electron field emission; electron transport through metal vacuum interface; ensemble particle Monte Carlo; high electric fields; metal-vacuum tunneling structures; quantum transport simulations; semiconductor vacuum interface; simulation packages; transmission coefficient; vacuum microelectronics; Discrete event simulation; Electron emission; Elementary particle vacuum; Equations; Particle scattering; Semiconductor device packaging; Tunneling; Vacuum technology; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0243-5
  • Type

    conf

  • DOI
    10.1109/IEDM.1991.235463
  • Filename
    235463