Title :
Film edge emitters: the basis for a new vacuum transistor
Author :
Gray, H.F. ; Shaw, J.L. ; Akinwande, A.I. ; Bauhahn, P.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
The authors have designed a novel thin-film edge emitter FEA (field emitter array) and report the first low-voltage field emission results from the thin-film edge emitter. The emitter is part of a thin-film diode structure which has a submicron spacing between emitter and collector; the emitter film thickness is less than 500 AA. This thin-film FEA is directed towards low-power microwave and millimeter-wave amplification.<>
Keywords :
electron field emission; microwave amplifiers; vacuum microelectronics; 500 A; emitter film thickness; field emitter array; film edge emitters; low-power amplification; low-voltage field emission; microwave amplification; millimeter-wave amplification; submicron spacing; thin-film diode structure; thin-film edge emitter; vacuum transistor; Apertures; Cathodes; Electromagnetic heating; Electron beams; Electron tubes; FETs; Field emitter arrays; Lithography; Microwave transistors; Thin film sensors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235467
