DocumentCode
3305671
Title
Film edge emitters: the basis for a new vacuum transistor
Author
Gray, H.F. ; Shaw, J.L. ; Akinwande, A.I. ; Bauhahn, P.
Author_Institution
US Naval Res. Lab., Washington, DC, USA
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
201
Lastpage
204
Abstract
The authors have designed a novel thin-film edge emitter FEA (field emitter array) and report the first low-voltage field emission results from the thin-film edge emitter. The emitter is part of a thin-film diode structure which has a submicron spacing between emitter and collector; the emitter film thickness is less than 500 AA. This thin-film FEA is directed towards low-power microwave and millimeter-wave amplification.<>
Keywords
electron field emission; microwave amplifiers; vacuum microelectronics; 500 A; emitter film thickness; field emitter array; film edge emitters; low-power amplification; low-voltage field emission; microwave amplification; millimeter-wave amplification; submicron spacing; thin-film diode structure; thin-film edge emitter; vacuum transistor; Apertures; Cathodes; Electromagnetic heating; Electron beams; Electron tubes; FETs; Field emitter arrays; Lithography; Microwave transistors; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235467
Filename
235467
Link To Document