DocumentCode :
33057
Title :
Enhanced Current Drive of Double-Gate 
-IGZO Thin-Film Transistors
Author :
Tsang-Long Chen ; Kuan-Chang Huang ; Hsuan-Yi Lin ; Chou, C.H. ; Lin, H.H. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
34
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
417
Lastpage :
419
Abstract :
Due to the degradation by hydrogen, the mobilities near the top and bottom insulator/channel interfaces are lower than those at the central amorphous In-Ga-Zn-O (α-IGZO) channel, reflecting the mobilities of 10.2, 7.5, and 1.8 cm2/V·s for double-gate (DG), bottom-gate, and top-gate operations, respectively. DG operation can push more electrons into the central channel than single-gate (SG) operation. Based on the secondary ion mass spectroscopy, hydrogen has a higher concentration near the top and bottom interfaces than at the central region. Based on the first-principle calculations, the hydrogen can form shallow donor states and degrade the mobility of α-IGZO thin-film transistors. The DG operation also creates a larger lateral electric field along the channel direction than SG operation. Both mobility enhancement and lateral electric field increase lead to significant drive current enhancement.
Keywords :
gallium compounds; indium compounds; secondary ion mass spectroscopy; thin film transistors; DG; InGaZnO; SG; bottom-gate operation; central amorphous channel; double-gate thin-film transistor; drive current enhancement; first-principle calculation; insulator-channel interface; mobility reflection; secondary ion mass spectroscopy; single-gate operation; top-gate operation; Hydrogen; Insulators; Logic gates; Thin film transistors; Threshold voltage; Amorphous In–Ga–Zn–O (IGZO) ($alpha$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2238884
Filename :
6423205
Link To Document :
