Title :
Realization and performance of quarter micron feature size InGaAs/InP MSM photodetector
Author :
Riaziat, M.L. ; Pao, Y.C. ; Yuen, C. ; Marsland, R.
Author_Institution :
Litton, Solid State Div., Santa Clara, CA, USA
Abstract :
A high-speed quarter-micron feature size In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal (MSM) photodetector was fabricated on InP for integrated optoelectronic applications. The photodetector material was grown by molecular beam epitaxy and processed by direct e-beam lithography. The intrinsic detector is expected to have a 3-dB bandwidth exceeding 60 GHz. The measured extrinsic bandwidth limited by parasitic bonding pads and package capacitance is approximately 30 GHz. The dark current for this detector is 1.0 mu A at 1.25 V bias. Without an antireflection dielectric coating, the photodetector responsivity exceeds 0.15 A/W. A novel optical mixing technique was used for frequency response characterization of this device.<>
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; indium compounds; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; solid-state microwave devices; 0.25 micron; 1 muA; 1.25 V; 60 to 30 GHz; InGaAs-InP; InP substrate; MSM photodetector; bias; dark current; direct e-beam lithography; fabrication; feature size; frequency response characterization; integrated optoelectronic applications; intrinsic detector; metal-semiconductor-metal; molecular beam epitaxy; optical mixing technique; package capacitance; parasitic bonding pads; parasitic capacitance; performance; responsivity; semiconductors; Bandwidth; Bonding; Capacitance measurement; Detectors; Dielectric measurements; Indium phosphide; Integrated optoelectronics; Lithography; Molecular beam epitaxial growth; Photodetectors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235469
