Title :
Millimeter wave AlGaAs/InGaAs 2DEG-CCDs
Author :
Colbeth, R.E. ; LaRue, R.A. ; Davis, G.A. ; Yuen, C. ; Webb, C. ; Shih, C. ; Weiss, R.E.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A two-phase, InGaAs channel 2DEG-CCD (charge coupled device) intended for millimeter-wave signal acquisition and delay is presented. Signal delay versus clock frequency has been measured from 1 MHz to 14 GHz, verifying CCD operation. The input-to-output transfer function is linear with a 1 dB compression point at 2 dBm and a 3rd harmonic intercept at 35 dBm. A charge transfer efficiency (CTE) of 0.99 has been measured at 4.73 GHz. Two-dimensional transient simulations show that the charge packet transfers at saturation velocity, and that CTE degradation results primarily from charge trapping in interelectrode parasitic wells. The simulations predict that CTE greater than 0.9999 is achievable at clock frequencies up to 50 GHz.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; charge-coupled device circuits; gallium arsenide; indium compounds; 1 MHz to 14 GHz; 2DEG-CCD; 99 percent; AlGaAs-InGaAs; CCDs; CTE; InGaAs channel; charge transfer efficiency; charge trapping; clock frequencies; compression point; input-to-output transfer function; interelectrode parasitic wells; millimeter wave signal delay; millimeter-wave signal acquisition; saturation velocity; semiconductors; simulations; two dimensional electron gas; two phase CCD; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Current measurement; Delay; Frequency measurement; Indium gallium arsenide; Millimeter wave measurements; Transfer functions;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235471