1 GHz CCD transient detector

Author

Sankaranarayanan, L. ; Hoekstra, W. ; Heldens, L.G.M. ; Kokshoorn, A.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

179

Lastpage

182

Abstract

A charge coupled-device (CCD) capable of acquiring 2 K samples of analog information at a 1-GHz rate, the fastest CCD on silicon, is reported. The prototype fast-in/slow-out (FISO) CCD is configured as single-input, single-output device. Subsequent to the front-end 1-GHz input sampler a novel three-stage charge-domain demultiplexer is implemented which distributes the samples from one input to 8 parallel CCDs of 256 stages each. The outputs from the 8 channels are then brought to a single output amplifier through a serial-output register designed for a read-out rate of 1-10 MHz. The complete CCD system has a dynamic range of >45 dB and can handle a maximum of 40-45 K electrons with a transfer loss of less than 4*10/sup -5/.<>

Keywords

charge-coupled device circuits; data acquisition; demultiplexing equipment; shift registers; 1 GHz; 1 to 10 MHz; 1-GHz input sampler; 8 channels; CCD shift register; CCD transient detector; FISO CCD; Si chip; analog information; charge coupled-device; charge-domain demultiplexer; dynamic range; fast-in slow-out CCD; prototype; read-out rate; serial-output register; single input single output device; single output amplifier; transfer loss; Bandwidth; Charge coupled devices; Clocks; Data acquisition; Detectors; Electrons; Laboratories; Prototypes; Sampling methods; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235472

Filename

235472