1040*1040 element PtSi Schottky-barrier IR image sensor

Author

Yutani, N. ; Yagi, H. ; Kimata, M. ; Nakanishi, J. ; Nagayoshi, S. ; Tubouchi, N.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

175

Lastpage

178

Abstract

A high-density infrared image sensor has been developed for thermal imaging in the 3-5 mu m infrared band. The array size is 1040*1040. The detector is a platinum silicide (PtSi) Schottky-barrier diode. The charge sweep device (CSD) architecture is used for the device in order to realize a large fill factor and a high saturation level. The device is fabricated with a 1.5 mu m minimum feature size and has a large fill factor of 53% in spite of the small pixel size (17*17 mu m/sup 2/). The saturation level is improved by increasing the detector storage capacity. A high saturation level of 1.6*10/sup 6/ electrons is obtained. The noise equivalent temperature difference with f/1.2 optics is estimated as 0.10 K at 300 K.<>

Keywords

CCD image sensors; Schottky-barrier diodes; VLSI; infrared detectors; infrared imaging; platinum compounds; 1.5 micron; 1040 pixel; 1081600 pixel; 17 micron; 3 to 5 micron; 300 K; IR image sensor; PtSi-Si; Schottky-barrier diode; charge sweep device; detector storage capacity; feature size; fill factor; infrared band; infrared image sensor; noise equivalent temperature difference; operation; pixel size; saturation level; silicides; temperature difference 0.1 K; thermal imaging; Detectors; Electron optics; Infrared image sensors; Optical imaging; Optical noise; Optical saturation; Platinum; Schottky diodes; Silicides; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235473

Filename

235473