• DocumentCode
    3305796
  • Title

    A CMOS capacitance sensor that monitors cell viability

  • Author

    Prakash, Somashekar Bangalore ; Abshire, Pamela

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
  • fYear
    2005
  • fDate
    Oct. 30 2005-Nov. 3 2005
  • Abstract
    We describe a CMOS capacitance sensor for measuring the capacitive behavior of living cells in a culture environment, in the presence of weak electric fields. The underlying physical phenomenon results primarily from polarization of the ionic cloud surrounding the cell in aqueous medium. The measured capacitance depends on a variety of factors including cell morphology, membrane integrity, medium pH and extra cellular ionic concentration and serves as an indicator of cell health. The capacitance sensor uses the principle of charge sharing and maps sensed capacitance values to voltages. The sensor chip has been fabricated in a commercially available 0.5 mum, 2-poly 3-metal CMOS technology. The sensors have been successfully used for long term monitoring of cell viability in vitro
  • Keywords
    CMOS integrated circuits; bioelectric phenomena; biosensors; capacitive sensors; cellular biophysics; 0.5 micron; CMOS capacitance sensor; capacitive behavior; cell culture; cell morphology; cell viability monitoring; charge sharing; extra cellular ionic concentration; ionic cloud; membrane integrity; sensor chip; weak electric fields; Biomembranes; CMOS technology; Capacitance measurement; Capacitive sensors; Clouds; Electric variables measurement; Morphology; Polarization; Semiconductor device measurement; Sensor phenomena and characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2005 IEEE
  • Conference_Location
    Irvine, CA
  • Print_ISBN
    0-7803-9056-3
  • Type

    conf

  • DOI
    10.1109/ICSENS.2005.1597915
  • Filename
    1597915