DocumentCode
3305796
Title
A CMOS capacitance sensor that monitors cell viability
Author
Prakash, Somashekar Bangalore ; Abshire, Pamela
Author_Institution
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD
fYear
2005
fDate
Oct. 30 2005-Nov. 3 2005
Abstract
We describe a CMOS capacitance sensor for measuring the capacitive behavior of living cells in a culture environment, in the presence of weak electric fields. The underlying physical phenomenon results primarily from polarization of the ionic cloud surrounding the cell in aqueous medium. The measured capacitance depends on a variety of factors including cell morphology, membrane integrity, medium pH and extra cellular ionic concentration and serves as an indicator of cell health. The capacitance sensor uses the principle of charge sharing and maps sensed capacitance values to voltages. The sensor chip has been fabricated in a commercially available 0.5 mum, 2-poly 3-metal CMOS technology. The sensors have been successfully used for long term monitoring of cell viability in vitro
Keywords
CMOS integrated circuits; bioelectric phenomena; biosensors; capacitive sensors; cellular biophysics; 0.5 micron; CMOS capacitance sensor; capacitive behavior; cell culture; cell morphology; cell viability monitoring; charge sharing; extra cellular ionic concentration; ionic cloud; membrane integrity; sensor chip; weak electric fields; Biomembranes; CMOS technology; Capacitance measurement; Capacitive sensors; Clouds; Electric variables measurement; Morphology; Polarization; Semiconductor device measurement; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2005 IEEE
Conference_Location
Irvine, CA
Print_ISBN
0-7803-9056-3
Type
conf
DOI
10.1109/ICSENS.2005.1597915
Filename
1597915
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