An Integrated Transformer Balun for 60 GHz Silicon RF IC Design

Author

Felic, G. ; Skafidas, E.

Author_Institution

Univ. of Melbourne, Parkville

fYear

2007

fDate

July 30 2007-Aug. 2 2007

Firstpage

541

Lastpage

542

Abstract

A broadband monolithic transformer balun has been designed and fabricated at millimeter-wave frequencies. The balun is implemented on 0.13 um CMOS process and integrated with the 60 GHz mixer circuit. A measured amplitude and phase balance less than 3 dB and 5 degrees respectively over the 50-65 GHz frequency band was achieved. The designed device has advantages of small size, simple layout and wide operational frequency range.

Keywords

CMOS integrated circuits; baluns; integrated circuit design; millimetre wave integrated circuits; millimetre wave mixers; transformers; CMOS process; broadband monolithic transformer balun; frequency 50 GHz to 65 GHz; integrated transformer balun; millimeter-wave frequencies; mixer circuit; passive balun; silicon RF IC design; size 0.13 mum; CMOS process; Frequency measurement; Impedance matching; Integrated circuit measurements; Millimeter wave integrated circuits; Millimeter wave measurements; Phase measurement; Radio frequency; Radiofrequency integrated circuits; Silicon; CMOS; Passive balun; RF IC design;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Systems and Electronics, 2007. ISSSE '07. International Symposium on

Conference_Location

Montreal, Que.

Print_ISBN

1-4244-1448-2

Electronic_ISBN

1-4244-1449-0

Type

conf

DOI

10.1109/ISSSE.2007.4294532

Filename

4294532