Title :
Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs
Author :
Agarwal, Harshit ; Khandelwal, Sourabh ; Dey, Sagnik ; Chenming Hu ; Chauhan, Yogesh Singh
Author_Institution :
Dept. of Electr. EngineeringNanolab, Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; flicker noise; 1/f noise; BSIM6; CMOS technology node; analytical modeling; bias dependence; bulk MOSFET; complementary metal oxide semiconductor; current model; flicker noise; halo implanted MOSFET; high-trap density; industry standard model; metal oxide semiconductor field effect transistor; size 45 nm; 1f noise; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Semiconductor process modeling; BSIM6; Compact Model; Flicker Noise; Halo Doping; compact model; flicker noise; halo doping;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2424686
