A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Author

Shirota, R. ; Yamaguchi, T.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

123

Lastpage

126

Abstract

The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V/sub GS/<5 V, V/sub DS/<3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V>

Keywords

Auger effect; EPROM; MOS integrated circuits; hot carriers; insulated gate field effect transistors; numerical analysis; semiconductor device models; 2.3 to 5.0 V; Auger recombination; analytical model; experimental results; hot electron injection; injection mechanism; low applied voltage region; low voltage hot electron; numerical analysis; phonon assist process; phonon scattering; submicron MOSFETs; Absorption; Analytical models; Charge carrier processes; Distribution functions; Equations; Low voltage; MOSFETs; Phonons; Secondary generated hot electron injection; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235485

Filename

235485