Modeling of high energy electrons in n-MOSFETs

Author

Fiegna, C. ; Sangiorgi, E. ; Venturi, F. ; Abramo, A. ; Ricco, B.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

119

Lastpage

122

Abstract

An optimization of transport parameters for Monte Carlo simulation of electrons in silicon has been performed in order to obtain quantitative agreement between simulations and experiments when dealing with problems involving very-high-energy electrons, such as impact ionization and the injection of hot-electrons into the gate oxide of MOSFETs. An original physically based model for electron injection into SiO/sub 2/ is proposed which consistently accounts for both thermionic injection and tunneling of hot electrons. The results of numerical simulations are compared with experimental data on nMOSFET substrate current and bulk hot-electron gate current.<>

Keywords

Monte Carlo methods; hot carriers; insulated gate field effect transistors; semiconductor device models; Monte Carlo simulation; Si-SiO/sub 2/; bulk hot-electron gate current; electron injection into SiO/sub 2/; experimental data; gate oxide; high energy electrons; impact ionization; injection of hot-electrons; modeling; nMOSFET; numerical simulations; optimization of transport parameters; physically based model; short-channel MOSFET; substrate current; thermionic injection; tunneling of hot electrons; Current measurement; Deformable models; Discrete event simulation; Impact ionization; MOSFET circuits; Optical scattering; Phonons; Silicon; Substrate hot electron injection; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235486

Filename

235486