Title :
Plasma-Induced Deactivation Of P, B, Sb By Low-Energy (<30 eV) Ion Bombardment During Low-Temperature Silicon Epitaxy
Author :
Kumami, H. ; Shindo, W. ; Kakuta, J. ; Ohmi, T.
Author_Institution :
Tohoku University
Keywords :
Amorphous materials; Argon; Boron; Conductivity; Crystallization; Plasma temperature; Semiconductor films; Silicon; Sputtering; Substrates;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.729932
