Predicted performance of n/sup +/p indium phosphide solar cells under laser illumination

Author

Jain, R.K.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

676

Lastpage

677

Abstract

The predicted performance of a high-efficiency n/sup +/p InP solar cell under laser illumination is described. This work is based on the modeling work of R. K. Jain and D. J. Flood, using the PC-1D computer code to simulate the I-V characteristics of the highest-efficiency (19.1% AMO, 25 degrees C) homoepitaxial InP cell grown by the MOCVD (metal-organic chemical vapor deposition) process. The calculated performance of an optimized InP cell (with prismatic cover, series resistance 0.01 Omega -cm/sup 2/) versus source wavelength (25 degrees C, 1 W/cm/sup 2/) is shown. It is concluded that indium phosphide solar cells offer a great potential as a radiation-hard photovoltaic receiver with high conversion efficiencies for laser power beaming applications.<>

Keywords

III-V semiconductors; electronic engineering computing; indium compounds; laser beam effects; radiation hardening (electronics); semiconductor device models; solar cells; I-V characteristics; III-V semiconductor; InP solar cell; MOCVD; computer code; laser illumination; laser power beaming applications; n/sup +/p solar cell; performance; radiation-hard photovoltaic receiver; Chemical vapor deposition; Computational modeling; Computer simulation; Floods; Indium phosphide; Laser modes; Lighting; MOCVD; Photovoltaic cells; Photovoltaic systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235546

Filename

235546