FDTD analysis of microwave active antenna including nonlinear model of FET transistor

Author

Zhang, Y. ; Gardner, P. ; Ghafouri-Shiraz, H. ; Hall, P.S.

Author_Institution

Univ. of Birmingham, UK

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

618

Lastpage

621

Abstract

In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules.

Keywords

active antennas; circuit simulation; computational electromagnetics; finite difference time-domain analysis; harmonic analysis; microstrip antennas; semiconductor device models; FET nonlinear circuit model; FET nonlinear properties; biased FET class A mode operation; finite-difference time-domain method; high power integrated active antennas modules; microwave active antenna FDTD analysis; patch antennas; second harmonics; Circuits; Finite difference methods; Maxwell equations; Microstrip antennas; Microwave FETs; Microwave antennas; Microwave transistors; Patch antennas; Time domain analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187776

Filename

1187776