DocumentCode :
3306395
Title :
FDTD analysis of microwave active antenna including nonlinear model of FET transistor
Author :
Zhang, Y. ; Gardner, P. ; Ghafouri-Shiraz, H. ; Hall, P.S.
Author_Institution :
Univ. of Birmingham, UK
fYear :
2002
fDate :
17-19 Aug. 2002
Firstpage :
618
Lastpage :
621
Abstract :
In this paper, a non-linear circuit model of a FET has been incorporated into the finite-difference time-domain (FDTD) method when microwave active antennas are analysed. The FET, operating in class A mode, is biased and its non-linear properties (second harmonics) are investigated in a patch antenna configuration. The algorithm and the simulation results will be useful in the development of high power integrated active antenna modules.
Keywords :
active antennas; circuit simulation; computational electromagnetics; finite difference time-domain analysis; harmonic analysis; microstrip antennas; semiconductor device models; FET nonlinear circuit model; FET nonlinear properties; biased FET class A mode operation; finite-difference time-domain method; high power integrated active antennas modules; microwave active antenna FDTD analysis; patch antennas; second harmonics; Circuits; Finite difference methods; Maxwell equations; Microstrip antennas; Microwave FETs; Microwave antennas; Microwave transistors; Patch antennas; Time domain analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
Type :
conf
DOI :
10.1109/ICMMT.2002.1187776
Filename :
1187776
Link To Document :
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