Thin film dielectric deposition by rapid thermal CVD for InP device applications

Author

Lebland, F. ; Licoppe, C. ; Nissim, Y.I.

Author_Institution

CNET Lab. de Bagneux, France Telecom, France

fYear

1992

fDate

21-24 April 1992

Firstpage

654

Lastpage

657

Abstract

Rapid thermal chemical vapor deposition (CVD) was utilized to deposit silicon-based dielectric on InP at high temperature. Silicon oxynitride films can be deposited on InP at 750 degrees C with deposition rates at high as 100 AA/s. The composition of the films can be varied continuously with the oxidant gas flow rate from silicon dioxide to silicon nitride. With this process the substate is not degraded and the films are of device quality. A highly sensitive optical set-up has been developed to measure the tension in a dielectric P/In structure and thus to determine the stoichiometry of the SiO/sub x/N/sub y/ film which leaves the structure unstressed.<>

Keywords

chemical vapour deposition; insulating thin films; rapid thermal processing; semiconductor-insulator boundaries; silicon compounds; stoichiometry; 750 C; III-V semiconductor substrate; InP device; InP substrate; SiO/sub x/N/sub y/ film; SiO/sub x/N/sub y/-InP; composition; dielectric film deposition; high temperature; rapid thermal CVD; stoichiometry; Chemical vapor deposition; Dielectric devices; Dielectric thin films; Indium phosphide; Optical films; Semiconductor films; Silicon; Sputtering; Temperature; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235552

Filename

235552