In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

Author

Tsuchiya, T. ; Taniwatari, T. ; Uomi, K. ; Kawano, T. ; Ono, Y.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

646

Lastpage

649

Abstract

The authors have demonstrated in-situ X-ray monitoring in MOVPE (metal-organic vapor phase epitaxy). The in-situ X-ray monitoring was achieved even under the growth conditions at high temperature. The temperature dependence of lattice mismatch could be evaluated with sufficient accuracy and high resolution. In-situ X-ray monitoring was applied to the feedback growth of a strained InGaAs layer. The precise control of lattice mismatch of the InGaAs layer was achieved by the feedback growth.<>

Keywords

III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; III-V semiconductor; InGaAs-InP; InP substrate; MOVPE; feedback growth; in-situ X-ray monitoring; lattice mismatch; strained InGaAs; temperature dependence; Condition monitoring; Epitaxial growth; Epitaxial layers; Feedback; Fluid flow; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235554

Filename

235554