DocumentCode
3306526
Title
2.4 mu m intersubband absorption in In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells
Author
Asai, H. ; Kawamura, Y.
Author_Institution
NTT Opto-Electron. Lab., Kanagawa, Japan
fYear
1992
fDate
21-24 April 1992
Firstpage
493
Lastpage
496
Abstract
In/sub 1-x/Ga/sub x/As/AlAs/sub 1-y/Sb/sub y/ multiple quantum wells (MQWs) lattice-matched to
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared spectra of inorganic solids; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; 2.4 micron; In/sub 1-x/Ga/sub x/As-AlAs/sub 1-y/Sb/sub y/ multiple quantum wells; InP substrates; MQWs; Sb distribution coefficient; band-to-band absorption; growth temperature; intersubband absorption; molecular beam epitaxy; photoluminescence; Atomic layer deposition; Atomic measurements; Electromagnetic wave absorption; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical fiber communication; Photoluminescence; Quantum well devices; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235556
Filename
235556
Link To Document